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MBR3035PT - MBR3060PT
MBR3035PT - MBR3060PT
Features * * * * * *
Low power loss, high efficiency. High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection.
0.245(6.2) 0.225(5.7) 0.645(16.4) 0.625(15.9) 0.323(8.2) 0.313(7.9)
0.078(1.98) 10 30 0.203(5.16) 0.193(4.90)
TO-3P/ TO-247AD
.17(4.3) 0.84(21.3) 0.82(20.8) 0.134(3.4) 0.114(2.9)
10 TYP
BOTH SIDES
1
PIN 1 + PIN 3 CASE PIN 2
0.16(4.1) 0.14(3.5) 0.795(20.2) 0.775(19.7)
2
3
0.086(2.18) 0.076(1.93) 0.127(3.22) 0.117(2.97)
0.118(3.0) 0.108(2.7)
30 Ampere Schottky Barrier Rectifiers
Absolute Maximum Ratings*
Symbol
IO if(repetitive) if(surge) Average Rectified Current Peak Repetitive Forward Current (Rated VR , Square Wave, 20 KHz) @ TA = 130C Peak Forward Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method) Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Lead Storage Temperature Range Operating Junction Temperature
TA = 25C unless otherwise noted
0.048(1.22) 0.044(1.12) 0.225(5.7) 0.205(5.2)
0.030(0.76) 0.020(0.51)
Dimensions are in: inches (mm)
Parameter
Value
30 30 200 3.0 25 1.4 -65 to +175 -65 to +150
Units
A A A W mW/C C/W C C
PD RJL Tstg TJ
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics
Parameter
TA = 25C unless otherwise noted
Device
3035PT 3045PT 45 31 45 10,000 1.0 60 0.60 0.76 0.72 1.0 5.0 100 0.75 0.65 0.5 3050PT 50 35 50 3060PT 60 42 60 35 24 35
Units
V V V V/uS mA mA V V V V A
Peak Repetitive Reverse Voltage Maximum RMS Voltage DC Reverse Voltage (Rated VR) Voltage Rate of Change (Rated V R) Maximum Reverse Current TA = 25C @ rated VR TA = 125C Maximum Forward Voltage I F = 20 A, TC = 25C I F = 20 A, TC = 125C I F = 30 A, TC = 25C I F = 30 A, TC = 125C Peak Repetitive Reverse Surge Current 2.0 us Pulsu Width, f = 1.0 KHz
(c)1999 Fairchild Semiconductor Corporation
MBR3035PT - MBR3060PT, Rev. A
MBR3035PT - MBR3060PT
Schotty Barrier Rectifier
(continued)
Typical Characteristics
Forward Current Derating Curve
PEAK FORWARD SURGE CURRENT (A) 30 FORWARD CURRENT (A)
MBR3035PT-MBR3045PT
Non-Repetitive Surge Current
300 250 200 150 100 50 0
24
MBR3050PT-MBR3060PT
18
SINGLE PHASE HALF WAVE 60HZ RESISTIVE OR INDUCTIVE LOAD .375" (9.00mm) LOAD LENGTHS
12
6
0
0
25
50 75 100 125 150 AMBIENT TEMPERATURE ( C)
175
1
2
5 10 20 50 NUMBER OF CYCLES AT 60Hz
100
Forward Characteristics
50 10
MBR3050PT-MBR3060PT
Reverse Characteristics
50 REVERSE CURRENT (mA)
MBR3035PT-MBR3045PT
FORWARD CURRENT (A)
T A = 150 C
TA = 25 C
10
T A = 125 C MBR3050PT-MBR3060PT
1
1
MBR3035PT-MBR3045PT
TA = 75 C
0.1
MBR3035PT-MBR3045PT
0.1
Pulse Width = 300S 2% Duty Cycle
0.01
TA = 25 C MBR3050PT-MBR3060PT
0.01
0
0.2
0.4 0.6 0.8 FORWARD VOLTAGE (V)
1
1.2
0.001
0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
TRANSIENT THERMAL IMPEDANCE ( C/W)
Typical Junction Capacitance
5000 JUNCTION CAPACITANCE (pF)
Transient Thermal Impedance
100
2000
MBR3035PT-MBR3045PT
10
1000
MBR3050PT-MBR3060PT
500
1
200 100 0.1
1 10 REVERSE VOLTAGE (V)
100
0.1 0.01
0.1 1 10 T. PULSE DURATION (sec.)
100
MBR3035PT - MBR3060PT, Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

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